Solid State Electronic Devices

It provides a comprehensive coverage of the fundamental concepts of the subject, which will be useful to undergraduate and polytechnic students as well as practising engineers. The book begins with basic solid state topics such as electron dynamics, growth and crystal properties of semiconductors, energy bands, and excess carriers in semiconductors, and then moves on to the study of p-n junctions, bipolar junction transistors, and field effect transistors. This is followed by an analysis of special devices such as opto-electronic devices, power devices, and microwave devices. Finally, the text covers integrated circuits, micro-electromechanical systems, rectifiers, and power supplies.

Table of Contents:
Symbols Important Formulae and Expressions 1: : Electron Dynamics Introduction 2 1.1 Conduction of Electricity through Gases 1.1.1 Glow Discharge 1.2 Motion of Charged Particle in Electric Field 1.2.1 Energy Acquired by Electron 1.2.2 Electron Transit Time 1.3 Motion of a Charged Particle in Magnetic Field 1.4 Motion of Charged Particle in Combined Electric and Magnetic Field 1.5 Cathode-ray Tube 1.5.1 Focussing with Electric Fields 1.5.2 Focussing with Magnetic Field 1.5.3 Deflection Systems 2: : Growth and Crystal Properties of Semiconductors Introduction 2.1 Semiconductor Materials 2.2 Types of Solids 2.3 Crystal Lattices 2.3.1 Unit Cell 2.3.2 Cubic Lattices 2.3.3 Crystal Planes and Directions 2.3.4 Diamond Lattice 2.4 Atomic Bonding 2.4.1 Van der Waals Bond 2.4.2 Ionic Bond 2.4.3 Covalent Bond 2.4.4 Metallic Bond 2.5 Imperfections and Impurities in Solids 2.5.1 Imperfections 2.5.2 Impurities 2.6 Bulk Crystal Growth 2.6.1 Starting Material 2.6.2 Single-crystal Ingots 2.7 Epitaxial Growth 2.7.1 Vapour-phase Epitaxy 2.7.2 Liquid-phase Epitaxy 2.7.3 Molecular Beam Epitaxy 3: : Energy Bands and Charge Carriers in Semiconductors Introduction 3.1 Bonding Force and Formation of Energy Bands 3.2 E-k Diagrams 3.2.1 Band Structure Modification in Semiconductors 3.4 Charge Carriers in Semiconductors 3.4.1 Electrons and Holes 3.4.2 Intrinsic Semiconductor 3.4.3 Extrinsic Semiconductor 3.5 Carrier Concentrations in Semiconductors 3.5.1 Fermi Level 3.5.2 Equilibrium Electron and Hole Concentrations 3.5.3 Temperature Dependence of Carrier Concentrations 3.5.4 Compensation 3.6 Carrier Drift 3.6.1 Mobility and Conductivity 3.6.2 High-field effect 3.6.3 Hall Effect 3.7 Carrier Diffusion 3.7.1 Diffusion Current Density 3.7.2 Total Current Density 3.8 Graded Impurity Distribution 3.8.1 Induced Field 3.8.2 Einstein Relation 4: : Excess Carriers in Semiconductors Introduction 4.1 Semiconductor in Equilibrium 4.2 Excess Carrier Generation and Recombination 4.2.1 Optical Absorption 4.2.2 Excess Minority Carrier Lifetime 4.3 Carrier Lifetime (General Case) 4.3.1 Shockley-Read-Hall Theory 4.3.2 Low Injection 4.4 Diffusion and Recombination 4.4.1 Continuity Equation 4.4.2 Haynes-Shockley Experiment 4.5 Quasi-Fermi Energy Levels 4.6 Surface Effects 4.6.1 Surface States 4.6.2 Surface Recombination Velocity 5: : p-n Junction Introduction 5.1 Fabrication of p-n Junctions 5.1.1 p-n Junction Formation 5.1.2 Thermal Oxidation 5.1.3 Diffusion 5.2 Basic p-n Junction 5.2.1 Basic Structure 5.2.2 No Applied Bias 5.2.3 Built-in Electric Field 5.2.4 Space-charge Region Width 5.3 Reverse-biased p-n Junction 5.3.1 Energy Band Diagram 5.3.2 Space-charge Width and Electric Field 5.3.2 Depletion Capacitance 5.3.4 One-sided Abrupt Junction 5.4 Junctions With Non-uniform Doping 5.4.1 Linearly Graded Junctions 5.4.2 Hyper-abrupt Junctions 5.5 Varactor Diode 5.6 Junction Breakdown 5.6.1 Zener Breakdown 5.6.2 Avalanche Breakdown 5.7 Tunnel Diode 6: : p-n Junction Current Introduction 6.1 p-n Junction Current Flow 6.1.1 Charge Flow in a p-n Junction 6.1.2 Ideal Current-Voltage Characteristics 6.1.3 Boundary Conditions 6.1.4 Minority Carrier Distribution 6.1.5 Junction Current in Ideal p-n Junction 6.1.6 Short Diode 6.2 Small-signal Model of p-n Junction 6.2.1 Diffusion Resistance 6.2.2 Diffusion Capacitance 6.2.3 Equivalent Circuit 6.3 Generation-Recombination Currents 6.3.1 Reverse-bias Generation Current 6.3.2 Forward-bias Recombination Current 6.3.3 Net Forward-bias Current 6.4 Junction Diode Switching Times 7: : Metal-Semiconductor Junctions and Hetero-junctions Introduction 7.1 Metal-Semiconductor Contacts 7.1.1 Schottky Model 7.1.2 Space-charge Width and Junction Capacitance 7.1.3 Characteristics Based on Emission Model 7.1.4 Schottky Effect 7.1.5 Tunnelling Current 7.2 Effect of Surface States and Interface 7.3 Metal-Semiconductor Ohmic Contacts 7.3.1 Specific Contact Resistance 7.4 Heterojunctions 7.4.1 Energy Band Diagram 7.4.2 Two-dimensional Electron Gas 7.4.3 Quantum Confinement of Carriers 8: : Bipolar Junction Transistors Introduction 8.1 Fundamentals of Bipolar Junction Transistors 8.2 Current Components and Relations 8.3 Important Notations and Configurations 8.4 BJT Characteristics 8.5 Current Gains for Transistor 8.6 Minority Carrier Distribution 8.6.1 Base Region 8.6.2 Emitter Region 8.6.3 Collector Region 8.7 Models for Bipolar Junction Transistors 8.7.1 Ebers-Moll Model 8.7.2 Gummel-Poon Model 8.7.3 Hybrid-pi Model 8.7.4 h-parameter Equivalent Circuit Model 8.8 Important Configuration of BJT 8.8.1 Common-emitter Amplifier 8.8.2 Common-base Amplifier 8.8.3 Common-collector Amplifier 8.9 Thermal Runaway 8.10 Kirk Effect 8.11 Frequency Limitation for Transistor 8.12 Webster Effect 8.13 High-frequency Transistors 8.14 Switching Characteristics of BJT 8.14.1 Schottky Transistor 9: : Field-effect Transistor Introduction 9.1 Junction-field-effect Transistor 9.1.1 Operating Principle 9.1.2 Current-Voltage Characteristics 9.2 Metal-semiconductor Field-effect Transistor 9.2.1 Normally Off and Normally On MESFETs 9.2.2 High-electron-mobility Transistor 9.3 Basic MOS Structure 9.3.1 Depletion Layer Thickness 9.3.2 Work-function Difference 9.4 Capacitance-Voltage Characteristics of MOS Capacitor 9.4.1 Interface Traps and Oxide Charge 9.4.2 Effect of Oxide Charge on C-V Characteristics 9.5 MOS Field-effect Transistor 9.5.1 MOSFET Characteristics 9.5.2 Short Channel Effect 9.5.3 Control of Threshold Voltage 9.5.4 Substrate Bias Effect 9.5.5 Sub-threshold Characteristics 9.5.6 Equivalent Circuit for MOSFET 9.5.7 MOSFET Scaling and Hot Electron Effects 9.5.8 Drain-induced Barrier Lowering 9.5.9 Short Channel and Narrow Width Effect 9.5.10 Gate-induced Drain Leakage 9.5.11 Comparison of BJT with MOSFET 9.5.12 Types of MOSFET 10: : Opto-electronic Devices Introduction 10.1 Optical Absorption 10.1.1 Optical Absorption 10.1.2 Excess Carrier Generation Rate 10.2 Photovoltaic Cells 10.2.1 p-n Junction Solar Cells 10.2.2 Conversion Efficiency 10.2.3 Effect of Series Resistance 10.2.4 Heterojunction Solar Cells 10.2.5 Amorphous Silicon Solar Cells 10.3 Photodetectors 10.3.1 Photoconductors 10.3.2 Photodiodes 10.3.3 Phototransistors 10.4 Light-emitting Diodes 10.4.1 LED Materials and Devices 10.4.2 Loss Mechanisms and Structure 10.5 Laser Diodes 10.5.1 Materials and Structures 10.5.2 Population Inversion 11: : Power Devices Introduction 11.1 Bipolar Power Transistors 11.1.1 Current Crowding 11.1.2 Vertical Transistor Structure 11.1.3 Transistor Characteristics 11.1.4 Darlington Pair Configuration 11.2 Power MOSFETs 11.2.1 Structures 11.2.2 Power MOSFET Characteristics 11.3 Heat Sink 11.4 Semiconductor Controlled Rectifier 11.4.1 Fundamental Characteristics 11.4.2 Two-transistor Model 11.4.3 Depletion Layer Width and Effect of Gate Current 11.4.4 Bidirectional Thyristors 11.5 Gate Turn-off Thyristor 11.6 Insulated-gate Bipolar Transistor 11.7 Unijunction Transistor 12: : Integrated Circuits and Micro-electromechanical Systems Introduction 12.1 Photolithography 12.2 Etching Techniques 12.2.1 Wet Etching 12.2.2 Dry Etching 12.3 Passive Components 12.3.1 Resistors 12.3.2 Capacitors 12.3.3 Inductors 12.4 Bipolar Technology 12.4.1 Basic Process 12.4.2 Dielectric Isolation 12.5 MOSFET Technology 12.5.1 NMOS Process 12.5.2 NMOS Memory Devices 12.5.3 Charge-coupled Devices 12.5.4 CMOS Technology 12.6 MESFET Technology 12.7 Micro-electromechanical Systems 12.7.1 Basic Processes 13: : Microwave Devices Introduction 13.1 Types of Microwave Devices 13.2 Working Principle of Gunn and IMPATT Diodes 13.2.1 Gunn Diode 13.2.2 IMPATT Diode 13.3 Operation of TRAPATT and BARITT Diodes 13.3.1 TRAPATT Diode 13.3.2 BARITT Diode 14: : Rectifiers and Power Supplies Introduction 14.1 Single-phase Rectifiers 14.1.1 Half-wave Rectifier 14.1.2 Full-wave Rectifier 14.1.3 Bridge Rectifier 14.1.4 Ripple Factor 14.2 Filter Circuits 14.2.1 Shunt-capacitor Filter 14.2.2 ? Filter 14.2.3 RC Filter 14.3 Voltage Regulators 14.3.1 Zener Diode Regulator 14.3.2 Series Voltage Regulator 14.4 Switched-mode Power Supply Appendix A: Important Physical Constants Appendix B: Important Lattice Constants Appendix C: Properties of Some Common Semiconductors Appendix D: Bandgaps of Some Semiconductors Relative to the Optical Spectrum Appendix E: Properties of Silicon, Germanium and Gallium Arsenide at 300 K Appendix F: Important Properties of Si3N4 and SiO2 at 300 K Appendix G: Table of the Error Function Appendix H: The Periodic Table of Elements Appendix I: International System of Units References Index

About the Author :
D.K. Bhattacharya currently heads the Ion Implantation Group, Microwave and Instrumentation Group, Hydrophone Group and Quality Promotion Group at the Solid State Physics Laboratory, New Delhi. He has over two decades of experience as a practicing semiconductor scientist including a long association with the MEMS Division , Solid State Physics Laboratory , New Delhi. Rajnish Sharma teaches subjects related to electronic devices at Chitkara University, HP. A PhD from Kurukshetra University and National Physical Laboratory, New Delhi, he has served BITS , Pilani as a faculty for almost 6 years.