Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.

Table of Contents:
Chapter I. Low-Dimensional Systems: Theory and Experiment 1.1. Theory of the two-dimensional electronic systems A.V. Chaplik, M.V. Entin  1.2. Two-dimensional semimetal in HgTe-based quantum wells Z.D.Kvon, E.B.Olshanetsky, D.A.Kozlov, N.N.Mikhailov, S.A.Dvoretsky 1.3. Nonlinear two-dimensional electron conductivity at high filling factors A.A.Bykov, S.A. Vitkalov 1.4. Silicon-based nanoheterostructures with quantum dots A.V.Dvurechenskii, A.I.Yakimov 1.5. Electron transport: from nanostructures to nanoelectromechanical systems A.G.Pogosov, M.V. Budantsev, A.A. Shevyrin, E.Yu.Zhdanov, D.A.Pohabov 1.6. Modeling of quantum transport and single-electron charging in GaAs/AlGaAs-nanostructures O.A.Tkachenko, V.A.Tkachenko, Z.D.Kvon, D.V.Scheglov, A.L.Aseev 1.7. Spectroscopy of vibrational states in low-dimensional semiconductor systems A.G.Milekhin, D.R.T. Zahn Chapter II. Surface, Interface, Epitaxy 2.1. Atomic processes on silicon surface A.V. Latyshev, L.I. Fedina, S.S. Kosolobov, S.V. Sitnikov, D.I. Rogilo, E.E. Rodyakina, D.A. Nasimov, D.V. Sheglov, A.L. Aseev 2.2. Atomic structure of low-dimensional semiconductor heterosystems A.K.Gutakovsky, A.V.Latyshev, A.L.Aseev 2.3. Formation of GaAs step-terraced surfaces by annealing in equilibrium conditions V.L.Alperovich, I.O.Ahundov, D.M.Kazantsev, N.S.Rudaya, E.E.Rodiakina, A.S.Kozhukhov, D.V.Shcheglov, A.N.Karpov, N.L.Schwartz, A.S.Terekhov, A.V. Latyshev 2.4. Atomic Processes in the Formation Strained Ge Layers on Si (111) and (001) Substrates within Stransky-Krastanov Growth Mechanism S.A. Teys 2.5. Molecular-beam epitaxy of CdxHg1-xTe Yu.G.Sidorov, A.P.Antsiferov, V.S.Varavin, S.A.Dvoretsky, N.N.Mikhailov, M.V.Yakushev, I.V.Sabinina, V.G.Remesnik, D.G.Ikusov, I.N.Uzhakov, G.Yu.Sidorov, V.D.Kuzmin, S.V.Rihlicky, V.A.Shvets, A.S.Mardezhov, E.V.Spesivtsev, A.K.Gutakovsky, A.V.Latyshev 2.6. Surface morphologies obtained by Ge deposition on bare and oxidized silicon surfaces at different temperatures A.A.Shklyaev, K.N.Romaniuk, S.S.Kosolobov, A.V.Latyshev 2.7. Monte-Carlo simulation of semiconductor nanostructures growth  I.G.Neizvestny, N.L.Shwartz Chapter III. Radiation Effects on Semiconductor Structures 3.1. The Energy Pulse Oriented Crystallization Phenomenon in Solids (Laser Annealing) A.V.Dvurechenskii 3.2. Universality of the {113} habit plane in Si for mixed aggregation of vacancies and self-interstitial atoms provided by topological bond defect formation L.I.Fedina, A.K.Gutakovsky, A.V.Latyshev, A.L.Aseev 3.4. Silicon-on-insulator structures produced by ion-beam synthesis and hydrogen transfer I.E.Tyschenko, V.P.Popov Chapter IV. Electronic Advanced Materials 4.1. Superminiature radiation sources based on semiconductor nanostructures  V.A.Haisler, A.V.Haisler, I.A.Derebezov, A.S.Yaroshevich, A.K.Bakarov, D.V.Dmitriev, A.K.Kalagin, A.I.Toropov, M.M.Kachanova, Yu.A.Zhivodkov, T.A.Gavrilova, A.S.Medvedev, L.A.Nenasheva, O.I.Semenova, K.V.Grachev, V.K.Sandyrev, A.S.Kozhukhov, D.V.Shcheglov, D.B.Tretyakov, I.I.Beterov, V.M.Entin, I.I.Ryabtsev, A.V.Latyshev, A.L.Aseev 4.2. Three-dimensional systems and nanostructures: technology, physics and applications V.Ya.Prinz 4.3. The nature of defects responsible for transport in a hafnia-based resistive random access memory element D.R.Islamov, T.V.Perevalov, V.A.Gritsenko, V.Sh.Aliev, A.A.Saraev, V.V. Kaichev, M.V.Ivanova, M.V.Zamo1ryanskaya, A. Chin 4.4. The optical multiplexor based on a multiple of connected waveguides in silicon-on-insulator structures A.V.Tsarev

About the Author :
Professor Alexander V. Latyshev is Director of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics, crystal growth, nanoheterostructures, electron&ion beam lithography, crystallography, structural diagnostics, and electron and atomic force microscopies. In particular Latyshev's research interests include various modes of electron microscopy and their applications to diagnostic and the study of semiconductor and metal surfaces. He is particularly interested in the field of ultra high vacuum reflection electron microscopy (UHV-REM) for in situ studies of the kinetic and structural processes during the sublimation, phase transition, initial stages of epitaxy and surface gas reaction. He is one of the pioneers, who revived this method and applied to various problems of surface science in Russia. He has published over 200 papers, seven book chapters (in English) and two monographs (in Russian). He has received several scientific awards includingthe RAS Corresponding Member and the Russian Federation Government Prize in Education in the field of optoelectronics. Professor Anatoliy V. Dvurechenskii is Deputy Director for Science of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. His main research interests are in the field of atomic and electronic structure of point defects induced by fast electrons and ion beam irradiation; ion-beam assisted phase transition, crystal nucleation and growth; laser annealing, melting, solidification; electronic and optical phenomena in disordered system and low dimensional structures. His current research direction is quantum dot heterostructures: nanocrystal nucleation and growth with molecular beam epitaxy, pulsed ion beam action, pulsed laser annealing, electron transport and optical and spin phenomena in quantum dot heterostructures, nanoelectronics and nanophotonics, nanodevices. He has been awarded with the State Prize, the top honor of the Soviet Union in Science, for having carried out research on physical phenomena at pulsed laser annealing of thin semiconductor’s layers; the International prize of the Academies of Science of Soviet Union and German Democratic Republic, for research on ion implantation into semiconductors; and the Russian Federation Government Prize in the field of education, for the development of the system for training highly qualified researchers in the field of optoelectronics.In 2008 he was elected to Russian Academy of Science as corresponding member. He is a member of scientific boards in the Russian Academy of Science on the problems of “Radiation Physics of Solid State” and “Physics of Semiconductors.” Prof Dvurechenskii has published his research in more than 380 journal publications and nine book chapters. Professor Alexander L. Aseev is Chair of the Siberian Branch of the Russian Academy of Science, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics of micro-, nano- and optoelectronics, including the study of the atomic structure and electronic properties of semiconductor surfaces and interfaces. He has obtained new results about the metastable point defects configuration role at reaction with surfaces, dislocations, and defects. He has found reversible transitions of the system regularly spaced monatomic steps during sublimation and growth superstructural domains. He has published over 200 papers anb five monographs and he has nine patents. He has received several scientific awards including the RAS Academician and the Russian Federation Government Prize in Education in the field of optoelectronics.