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Home > Art, Film & Photography > Memorii: Memorie DRAM, Memorie Cache, Sram, Circuite de Memorie Eprom, Memorie Flash, Eeprom Serial, Memorie ROM, Memoria Sistemelor de Calcul
Memorii: Memorie DRAM, Memorie Cache, Sram, Circuite de Memorie Eprom, Memorie Flash, Eeprom Serial, Memorie ROM, Memoria Sistemelor de Calcul

Memorii: Memorie DRAM, Memorie Cache, Sram, Circuite de Memorie Eprom, Memorie Flash, Eeprom Serial, Memorie ROM, Memoria Sistemelor de Calcul


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About the Book

Surs: Wikipedia. Pagini: 29. Capitolele: Memorie DRAM, Memorie cache, SRAM, Circuite de memorie EPROM, Memorie flash, EEPROM Serial, Memorie ROM, Memoria sistemelor de calcul, Memorie cu acces aleator, Memorie video, Memorie paralel, Memoria Program la Microcontrollere, VRAM, Blocarea memoriei program, Memorie criptat . Extras: Dynamic random access memory (DRAM) este un tip de memorie cu acces direct care stocheaz fiecare bit de date intr-un condensator separat, intr-un circuit integrat. Deoarece condensatoarele se descarc, informa ia se poate terge in cazul in care prin semnalele de comand nu se specific reinc rcarea celulelor cu un anumit con inut. Aceast opera ie se nume te reimprosp tarea memoriei" (refreshing memory). Avantajul memoriei DRAM este simplitatea structurii: doar un tranzistor si un condensator sunt necesare pe bit, spre deosebire de memoria SRAM care are nevoie de ase tranzistoare. Acest lucru permite memoriei DRAM s ating o densitate de stocare foarte inalt . Spre deosebire de memoria flash, este o memorie volatil, pentru c i i pierde datele atunci cand nu mai este alimentat . Tranzistoarele si condensatoarele folosite sunt extrem de mici astfel incat pe un singur chip de memorie pot inc pea milioane. Principiul de operare al citirii DRAM, pentru o matrice de 4x4. Principiul de operare al scrierii DRAM, pentru o matrice de 4x4.DRAM este aranjat in mod obi nuit intr-o matrice p tratic dintr-un condensator i un tranzistor pe celul . Poza din dreapta arat un simplu exemplu cu 4x4 celule. (O martice DRAM modern poate fi alc tuit din mii de celule in l ime/lungime.) Liniile lungi care conecteaz fiecare linie sunt cunoscute ca linii de cuvinte. Fiecare coloan este compus din dou linii de bit, fiecare conectat la fiecare celul din coloan . (Ilustra ia din dreapta nu include acest detaliu important.) Sunt cunoscute in general ca i liniile de bit de + i -. Un amplificator de sens este o pereche de legatur - inversoare cone...


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Product Details
  • ISBN-13: 9781232203933
  • Publisher: Books LLC, Wiki Series
  • Publisher Imprint: Books LLC, Wiki Series
  • Height: 246 mm
  • No of Pages: 30
  • Spine Width: 2 mm
  • Weight: 73 gr
  • ISBN-10: 1232203939
  • Publisher Date: 08 Aug 2011
  • Binding: Paperback
  • Language: Romanian
  • Returnable: N
  • Sub Title: Memorie DRAM, Memorie Cache, Sram, Circuite de Memorie Eprom, Memorie Flash, Eeprom Serial, Memorie ROM, Memoria Sistemelor de Calcul
  • Width: 189 mm


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