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Home > Science, Technology & Agriculture > Mechanical engineering and materials > Materials science > Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices(Woodhead Publishing Series in Electronic and Optical Materials)
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices(Woodhead Publishing Series in Electronic and Optical Materials)

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices(Woodhead Publishing Series in Electronic and Optical Materials)


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About the Book

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Second Edition covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized. The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behavior; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications.

Table of Contents:
1. Fundamentals of Ferroelectric and Piezoelectric Properties 2. Structures, Phase Equilibria, and Properties of HfO2 3. Ferroelectricity in Doped HfO2: Causes and Dependencies 4. Growth 5. Simulation 6. Polarization of Condensed Matter 7. Electrical Behavior: Switching, Cycling, Retention 8. Ferroelectric Hafnium Oxide-Based Applications

About the Author :
Uwe Schroeder has been Deputy Scientific Director at NaMLab in Dresden, Germany, since 2009. His primary research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future devices. As a project manager, he researched high-k dielectrics and their integration into DRAM capacitors, and it was during this work that the previously unknown ferroelectric properties of doped HfO2-based dielectrics were discovered. He has focused on a detailed understanding of these new material properties and their integration into memory devices ever since. Cheol Seong Hwang has been a Professor in the Department of Materials Science and Engineering at Seoul National University, Korea, since 1998. He is a recipient of the Alexander von Humboldt fellowship award, the 7th Presidential Young Scientist Award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, and thin-film transistors. Hiroshi Funakubo is a Professor of the Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, Japan. He received the Richard M. Fulrath Award from the American Ceramic Society in 2008. His specific areas of interest include the preparation and properties of dielectric, ferroelectric, and piezoelectric films.


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Product Details
  • ISBN-13: 9780443291821
  • Publisher: Elsevier - Health Sciences Division
  • Publisher Imprint: Woodhead Publishing
  • Height: 229 mm
  • No of Pages: 794
  • Sub Title: Materials, Properties and Devices
  • Width: 152 mm
  • ISBN-10: 0443291829
  • Publisher Date: 19 Aug 2025
  • Binding: Paperback
  • Language: English
  • Series Title: Woodhead Publishing Series in Electronic and Optical Materials
  • Weight: 1096 gr


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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices(Woodhead Publishing Series in Electronic and Optical Materials)
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